au.\*:("SAMOTO, N")
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Bias-dependent collapse and its recovery phenomenon in AlGaAs/GaAs 2DEGFET's at low temperaturesHORI, Y; KUZUHARA, M; SAMOTO, N et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 12, pp 2720-2725, issn 0018-9383Article
Changes of volume and surface compositions of polymethylmethacrylate under electron beam irradiation in lithographySAMOTO, N; SHIMIZU, R; HASHIMOTO, H et al.Japanese journal of applied physics. 1985, Vol 24, Num 4, pp 482-486, issn 0021-4922Article
Ion beam assisted deposition of metal organic films using focused ion beamsGAMO, K; TAKAKURA, N; SAMOTO, N et al.Japanese journal of applied physics. 1984, Vol 23, Num 5, pp L293-L295, issn 0021-4922, 2Article
High electron mobility 18300 cm2/V.s in the InAlAs/InGaAs pseudomorphic structure obtained by channel indium composition modulationNAKAYAMA, T; MIYAMOTO, H; OISHI, E et al.Journal of electronic materials. 1996, Vol 25, Num 4, pp 555-558, issn 0361-5235Conference Paper
Subtalar arthrography in acute injuries of the calcaneofibular ligamentSUGIMOTO, K; SAMOTO, N; TAKAOKA, T et al.Journal of bone and joint surgery. British volume. 1998, Vol 80, Num 5, pp 785-790, issn 0301-620XArticle
Monitor and self-diagnostic technology for mask e-beam writing system (2)SAMOTO, N; MANABE, H; WAKIMOTO, O et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7637, issn 0277-786X, isbn 978-0-8194-8051-4 0-8194-8051-7, 76371K.1-76371K.8Conference Paper
Super-low noise heterojunction field-effect transistors (HJETs) with 0.2 μm T-shaped 8 gate fingersNASHIMOTO, Y; ICHIKAWA, S; SAMOTO, N et al.NEC research & development. 1992, Vol 33, Num 3, pp 268-272, issn 0547-051XArticle
Relationship between remaining solvent and acid diffusion in chemically amplified deep ultraviolet resistsITANI, T; YOSHINO, H; HASHIMOTO, S et al.Japanese journal of applied physics. 1996, Vol 35, Num 12B, pp 6501-6505, issn 0021-4922, 1Conference Paper
Radiographic analysis of hallux valgus. A two-dimensional coordinate systemTANAKA, Y; TAKAKURA, Y; KUMAI, T et al.Journal of bone and joint surgery. American volume. 1995, Vol 77, Num 2, pp 205-213, issn 0021-9355Article
Molecular-beam epitaxial growth of InAs/GaAs superlattices on GaAs substrates and its application to a superlattice channel modulation-doped field-effect transistorTOYOSHIMA, H; ONDA, K; MIZUKI, E et al.Journal of applied physics. 1991, Vol 69, Num 7, pp 3941-3949, issn 0021-8979Article
Monitor Technology of Outer Circumstances for Mask EB Writing SystemHOSHI, H; SAMOTO, N; MANABE, H et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7748, issn 0277-786X, isbn 0-8194-8238-2 978-0-8194-8238-9, 1Vol, 774817.1-774817.8Conference Paper
Subtalar arthrography in recurrent instability of the ankleSUGIMOTO, K; TAKAKURA, Y; SAMOTO, N et al.Clinical orthopaedics and related research. 2002, Num 394, pp 169-176, issn 0009-921XArticle
Nanolithography using a chemically amplified negative resist by electron beam exposureMANAKO, S; OCHIAI, Y; FUJITA, J.-I et al.Japanese journal of applied physics. 1994, Vol 33, Num 12B, pp 6993-6997, issn 0021-4922, 1Article
A stable high-brightness electron gun with Zr/W-tip for nanometer lithography. I: Emission properties in Schottky- and thermal field-emission regionsSAMOTO, N; SHIMIZU, R; HASHIMOTO, H et al.Japanese journal of applied physics. 1985, Vol 24, Num 6, pp 766-771, issn 0021-4922Article
Electron focusing with multiparallel GaAs-AlGaAs wires defined by damageless processingNIHEY, F; NAKAMURA, K; KUZUHARA, M et al.Applied physics letters. 1990, Vol 57, Num 12, pp 1218-1220, issn 0003-6951, 3 p.Article
8 nm wide line fabrication in PMMA on Si wafers by electron beam exposureEMOTO, F; GAMO, K; NAMBA, S et al.Japanese journal of applied physics. 1985, Vol 24, Num 10, pp L809-L811, issn 0021-4922Article
A study of dissolution characteristics and acid diffusion in chemically amplified DUV resistITANI, T; HASHIMOTO, S; YAMANA, M et al.Microelectronic engineering. 1998, Vol 41-42, pp 363-366, issn 0167-9317Conference Paper
A study of acid evaporation property in chemically amplified resistsHASHIMOTO, S; ITANI, T; YOSHINO, H et al.SPIE proceedings series. 1997, pp 248-255, isbn 0-8194-2463-3Conference Paper
A study of deblocking reaction of chemically amplified positive DUV resistsYAMANA, M; ITANI, T; YOSHINO, H et al.SPIE proceedings series. 1997, pp 269-279, isbn 0-8194-2463-3Conference Paper
Enhancement of electron mobility by preventing pit formation at the In0.52Al0.48As/In0.8Ga0.2As heterointerface using an inserted In0.53Ga0.47As layerNAKAYAMA, T; MIYAMOTO, H; OISHI, E et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1220-1224, issn 0022-0248, 2Conference Paper
(InAs) (GaAs) short period superlattice channel FETsONDA, K; TOYOSHIMA, H; SAMOTO, N et al.NEC research & development. 1992, Vol 33, Num 3, pp 273-279, issn 0547-051XArticle
DC and microwave performances of (InAs)(GaAs) short period superlattice channel 2DEGFET'sONDA, K; TOYOSHIMA, H; KUZUHARA, M et al.IEICE transactions. 1991, Vol 74, Num 12, pp 4114-4118, issn 0917-1673Article
